Thermal Analysis of a 3D Stacked High-Performance Commercial Microprocessor using Face-to-Face Wafer Bonding Technology
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3D integration technologies are seeing widespread adoption in the semiconductor industry to offset the limitations and slowdown of two-dimensional scaling. High-density 3D integration techniques such as face-to-face wafer bonding with sub-10 μm pitch can enable new ways of designing SoCs using all 3 dimensions, like folding a microprocessor design across multiple 3D tiers. However, overlapping thermal hotspots can be a challenge in such 3D stacked designs due to a general increase in power density. In this work, we perform a thorough thermal simulation study on sign-off quality physical design implementation of a state-of-the-art, high-performance, out-of-order microprocessor on a 7nm process technology. The physical design of the microprocessor is partitioned and implemented in a 2-tier, 3D stacked configuration with logic blocks and memory instances in separate tiers (logic-over-memory 3D). The thermal simulation model was calibrated to temperature measurement data from a high-performance, CPU-based 2D SoC chip fabricated on the same 7nm process technology. Thermal profiles of different 3D configurations under various workload conditions are simulated and compared. We find that stacking microprocessor designs in 3D without considering thermal implications can result in maximum die temperature up to 12C higher than their 2D counterparts under the worst-case power-indicative workload. This increase in temperature would reduce the amount of time for which a power-intensive workload can be run before throttling is required. However, logic-over-memory partitioned 3D CPU implementation can mitigate this temperature increase by half, which makes the temperature of the 3D design only 6^∘C higher than the 2D baseline. We conclude that using thermal aware design partitioning and improved cooling techniques can overcome the thermal challenges associated with 3D stacking.
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